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Axiom UCS-ML-128G4RW-AX memory module 128 GB 1 x 128 GB DDR4 3200 MHz ECC1
Axiom UCS-ML-128G4RW-AX memory module 128 GB 1 x 128 GB DDR4 3200 MHz ECC1 Axiom UCS-ML-128G4RW-AX memory module 128 GB 1 x 128 GB DDR4 3200 MHz ECC2

Axiom UCS-ML-128G4RW-AX memory module 128 GB 1 x 128 GB DDR4 3200 MHz ECC

Axiom UCS-ML-128G4RW-AX. Component for: PC/server, Internal memory: 128 GB, Memory layout (modules x size): 1 x 128 GB, Internal memory type: DDR4, Memory clock speed: 3200 MHz, Memory form factor: 288-pin DIMM, CAS latency: 22, ECC
Manufacturer: Axiom
SKU: 6742919
Manufacturer part number: UCS-ML-128G4RW-AX
UPC: 840177856419
MSRP: $1,817.00
$1,658.72
Axiom's DDR4 provides improved speed, power management and reliability over previous DDR generations. The release of DDR4 delivers an overall performance improvement of up to 30% for single DIMM configurations. DDR4 performance scales up to 65% faster in 3-DIMM per channel (3DPC) applications over DDR3. High bandwidth and faster data rates combined with lower voltage demands deliver the most compelling and significant DRAM computing update in the past decade.

 

  • 100% Increase in speed - Faster Data Rate equates to more responsive application loads on data-intensive programs
  • 300% increase in component densities – Equals larger modules for next-generation performance demands
  • 20% decrease in power consumption – Less power consumed means less wasted resources to cool systems and reserves battery program for mobile devices
  • Provides greater reliability, availability and serviceability (RAS) in enterprise applications – Complete integrity and fault tolerance for longer periods without system failure
  • Improved data signal
Axiom's DDR4 provides improved speed, power management and reliability over previous DDR generations. The release of DDR4 delivers an overall performance improvement of up to 30% for single DIMM configurations. DDR4 performance scales up to 65% faster in 3-DIMM per channel (3DPC) applications over DDR3. High bandwidth and faster data rates combined with lower voltage demands deliver the most compelling and significant DRAM computing update in the past decade.

 

  • 100% Increase in speed - Faster Data Rate equates to more responsive application loads on data-intensive programs
  • 300% increase in component densities – Equals larger modules for next-generation performance demands
  • 20% decrease in power consumption – Less power consumed means less wasted resources to cool systems and reserves battery program for mobile devices
  • Provides greater reliability, availability and serviceability (RAS) in enterprise applications – Complete integrity and fault tolerance for longer periods without system failure
  • Improved data signal
Products specifications
Attribute nameAttribute value
Technical details
Sustainability certificatesRoHS
Sustainability complianceY
Features
Module configuration4096M x 4
Internal memory128 GB
Internal memory typeDDR4
Memory clock speed3200 MHz
Component forPC/server
Memory form factor288-pin DIMM
ECCY
Buffered memory typeLoad reduced
CAS latency22
Memory voltage1.2 V
Memory layout (modules x size)1 x 128 GB
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Products specifications
Attribute nameAttribute value
Technical details
Sustainability certificatesRoHS
Sustainability complianceY
Features
Module configuration4096M x 4
Internal memory128 GB
Internal memory typeDDR4
Memory clock speed3200 MHz
Component forPC/server
Memory form factor288-pin DIMM
ECCY
Buffered memory typeLoad reduced
CAS latency22
Memory voltage1.2 V
Memory layout (modules x size)1 x 128 GB
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