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Axiom UCS-ML-256G8RT-H-AX memory module 256 GB 1 x 256 GB DDR4 2933 MHz ECC1
Axiom UCS-ML-256G8RT-H-AX memory module 256 GB 1 x 256 GB DDR4 2933 MHz ECC1 Axiom UCS-ML-256G8RT-H-AX memory module 256 GB 1 x 256 GB DDR4 2933 MHz ECC2

Axiom UCS-ML-256G8RT-H-AX memory module 256 GB 1 x 256 GB DDR4 2933 MHz ECC

Axiom UCS-ML-256G8RT-H-AX. Component for: PC/server, Internal memory: 256 GB, Memory layout (modules x size): 1 x 256 GB, Internal memory type: DDR4, Memory clock speed: 2933 MHz, Memory form factor: 288-pin DIMM, CAS latency: 21, ECC
Manufacturer: Axiom
SKU: 6742920
Manufacturer part number: UCS-ML-256G8RT-H-AX
UPC: 840177856402
MSRP: $7,933.00
$7,241.63
Axiom's DDR4 provides improved speed, power management and reliability over previous DDR generations. The release of DDR4 delivers an overall performance improvement of up to 30% for single DIMM configurations. DDR4 performance scales up to 65% faster in 3-DIMM per channel (3DPC) applications over DDR3. High bandwidth and faster data rates combined with lower voltage demands deliver the most compelling and significant DRAM computing update in the past decade.

 

  • 100% Increase in speed - Faster Data Rate equates to more responsive application loads on data-intensive programs
  • 300% increase in component densities – Equals larger modules for next-generation performance demands
  • 20% decrease in power consumption – Less power consumed means less wasted resources to cool systems and reserves battery program for mobile devices
  • Provides greater reliability, availability and serviceability (RAS) in enterprise applications – Complete integrity and fault tolerance for longer periods without system failure
  • Improved data signal
Axiom's DDR4 provides improved speed, power management and reliability over previous DDR generations. The release of DDR4 delivers an overall performance improvement of up to 30% for single DIMM configurations. DDR4 performance scales up to 65% faster in 3-DIMM per channel (3DPC) applications over DDR3. High bandwidth and faster data rates combined with lower voltage demands deliver the most compelling and significant DRAM computing update in the past decade.

 

  • 100% Increase in speed - Faster Data Rate equates to more responsive application loads on data-intensive programs
  • 300% increase in component densities – Equals larger modules for next-generation performance demands
  • 20% decrease in power consumption – Less power consumed means less wasted resources to cool systems and reserves battery program for mobile devices
  • Provides greater reliability, availability and serviceability (RAS) in enterprise applications – Complete integrity and fault tolerance for longer periods without system failure
  • Improved data signal
Products specifications
Attribute nameAttribute value
Technical details
Sustainability certificatesRoHS
Sustainability complianceY
Features
Module configuration4096M x 4
Internal memory256 GB
Memory layout (modules x size)1 x 256 GB
Internal memory typeDDR4
Memory clock speed2933 MHz
Component forPC/server
Memory form factor288-pin DIMM
ECCY
Buffered memory typeLoad reduced
CAS latency21
Memory voltage1.2 V
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Products specifications
Attribute nameAttribute value
Technical details
Sustainability certificatesRoHS
Sustainability complianceY
Features
Module configuration4096M x 4
Internal memory256 GB
Memory layout (modules x size)1 x 256 GB
Internal memory typeDDR4
Memory clock speed2933 MHz
Component forPC/server
Memory form factor288-pin DIMM
ECCY
Buffered memory typeLoad reduced
CAS latency21
Memory voltage1.2 V
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