Kingston Technology ValueRAM KVR26S19S6/4 memory module 4 GB 1 x 4 GB DDR4 2666 MHz1

Kingston Technology ValueRAM KVR26S19S6/4 memory module 4 GB 1 x 4 GB DDR4 2666 MHz

Kingston Technology ValueRAM KVR26S19S6/4. Component for: Notebook, Internal memory: 4 GB, Memory layout (modules x size): 1 x 4 GB, Internal memory type: DDR4, Memory clock speed: 2666 MHz, Memory form factor: 260-pin SO-DIMM, CAS latency: 19

Manufacturer: Kingston Technology

Availability: Out of Stock - on backorder and will be dispatched once in stock.

SKU: 5216075

Manufacturer part number: KVR26S19S6/4

UPC: 0740617280647

$17.00

Qty:

This document describes ValueRAM's KVR26S19S6/4 as a 512M x 64-bit (4GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM), 1Rx16, memory module, based on four 512M x 16-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. This 260-pin SODIMM uses gold contact fingers.

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Products specifications

Attribute name	Attribute value
Depth	0.0965"
Row cycle time	32 ns
Refresh row cycle time	32 ns
Row active time	Y
Width	2.74"
Height	1.18"
Doesn't contain	Halogen
Programming power voltage (VPP)	2.5 V
Technical details
Sustainability certificates	RoHS
Features
Internal memory	4 GB
Internal memory type	DDR4
Memory clock speed	2666 MHz
Component for	Notebook
Memory form factor	260-pin SO-DIMM
Buffered memory type	Unregistered (unbuffered)
CAS latency	19
Memory voltage	1.2 V
Memory layout (modules x size)	1 x 4 GB
Memory ranking	1
Operational conditions
Operating temperature (T-T)	0 - 85 °C
Storage temperature (T-T)	-55 - 100 °C

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Products specifications

Attribute name	Attribute value
Depth	0.0965"
Row cycle time	32 ns
Refresh row cycle time	32 ns
Row active time	Y
Width	2.74"
Height	1.18"
Doesn't contain	Halogen
Programming power voltage (VPP)	2.5 V
Technical details
Sustainability certificates	RoHS
Features
Internal memory	4 GB
Internal memory type	DDR4
Memory clock speed	2666 MHz
Component for	Notebook
Memory form factor	260-pin SO-DIMM
Buffered memory type	Unregistered (unbuffered)
CAS latency	19
Memory voltage	1.2 V
Memory layout (modules x size)	1 x 4 GB
Memory ranking	1
Operational conditions
Operating temperature (T-T)	0 - 85 °C
Storage temperature (T-T)	-55 - 100 °C

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