Transcend MTE662T2 M.2 1000 GB PCI Express 3.0 3D NAND NVMe

Transcend MTE662T2. SSD capacity: 1000 GB, SSD form factor: M.2, Read speed: 3500 MB/s, Write speed: 2700 MB/s, Component for: PC/notebook
Manufacturer: Transcend
SKU: 6626447
Manufacturer part number: TS1TMTE662T2
UPC: 0760557844617
$219.60
Transcend's MTE662T2 M.2 SSD features the PCI Express (PCIe) Gen 3 x4 interface and is compatible with NVM Express (NVMe) 1.3 specifications to achieve never-before-seen transfer speeds. The MTE662T2 features state-of-the-art 3D NAND technology, which allows 96 layers of 3D NAND flash chips to be vertically stacked. Compared to 3D NAND at 64 layers, this density breakthrough greatly improves storage efficiency, and its built-in DRAM cache allows faster access. Applied with 30µ" gold finger PCB and Corner Bond technology, the MTE662T2 is fully tested in-house to guarantee reliability in mission-critical applications, boasting an endurance rating of 3K Program/Erase cycles and an extended operating temperature ranging from -20℃~75℃.

 

  • DRAM Cache embedded
  • 30µ" PCB gold finger
  • Endurance: 3K P/E cycles (Program/Erase cycles) guaranteed
  • PCIe Gen 3 x4 interface
  • Key components fortified by default with Corner Bond technology
  • Compliant with PCI Express specification 3.1
  • Compliant with NVM Express specification 1.3
  • Supports NVM command
  • SLC caching technology
  • Built-in LDPC ECC (Error Correction Code) functionality
Transcend's MTE662T2 M.2 SSD features the PCI Express (PCIe) Gen 3 x4 interface and is compatible with NVM Express (NVMe) 1.3 specifications to achieve never-before-seen transfer speeds. The MTE662T2 features state-of-the-art 3D NAND technology, which allows 96 layers of 3D NAND flash chips to be vertically stacked. Compared to 3D NAND at 64 layers, this density breakthrough greatly improves storage efficiency, and its built-in DRAM cache allows faster access. Applied with 30µ" gold finger PCB and Corner Bond technology, the MTE662T2 is fully tested in-house to guarantee reliability in mission-critical applications, boasting an endurance rating of 3K Program/Erase cycles and an extended operating temperature ranging from -20℃~75℃.

 

  • DRAM Cache embedded
  • 30µ" PCB gold finger
  • Endurance: 3K P/E cycles (Program/Erase cycles) guaranteed
  • PCIe Gen 3 x4 interface
  • Key components fortified by default with Corner Bond technology
  • Compliant with PCI Express specification 3.1
  • Compliant with NVM Express specification 1.3
  • Supports NVM command
  • SLC caching technology
  • Built-in LDPC ECC (Error Correction Code) functionality
Products specifications
Attribute nameAttribute value
Height2700 MB/s
Weight0.317 oz
TBW rating4400
Design
CertificationCE, FCC, BSMI
Features
Random read (4KB)2280 (22 x 80 mm)
Component forCE, FCC, BSMI
Write speed2700 MB/s
Random write (4KB)355000 IOPS
Power
Power consumption (sleep)1500 G
Operational conditions
Minimum operating temperatureEmbedded
Maximum operating temperaturex4
Operating temperature (T-T)-20 - 75 °C
Operating vibration20 G
*
*
*
Products specifications
Attribute nameAttribute value
Height2700 MB/s
Weight0.317 oz
TBW rating4400
Design
CertificationCE, FCC, BSMI
Features
Random read (4KB)2280 (22 x 80 mm)
Component forCE, FCC, BSMI
Write speed2700 MB/s
Random write (4KB)355000 IOPS
Power
Power consumption (sleep)1500 G
Operational conditions
Minimum operating temperatureEmbedded
Maximum operating temperaturex4
Operating temperature (T-T)-20 - 75 °C
Operating vibration20 G
Product tags
  • (51788)