Transcend MTE710T M.2 2000 GB PCI Express 4.0 3D NAND NVMe

Transcend MTE710T. SSD capacity: 2000 GB, SSD form factor: M.2, Read speed: 3800 MB/s, Write speed: 3200 MB/s, Component for: PC
Manufacturer: Transcend
SKU: 6701690
Manufacturer part number: TS2TMTE710T
$292.63
Transcend's M.2 SSD MTE710T features the PCI Express (PCIe) Gen 4 x4 interface and is compatible with NVM Express (NVMe) 1.4 specifications to achieve never-before-seen transfer speeds. The MTE710T features state-of-the-art 3D NAND technology, which allows 112 layers of 3D NAND flash chips to be vertically stacked. Compared to 3D NAND at 96 layers, this density breakthrough greatly improves storage efficiency, and its built-in DRAM cache allows faster access. Applied with 30µ" gold finger PCB and Corner Bond technology, the MTE710T is fully tested in-house to guarantee reliability in mission-critical applications, boasting an endurance rating of 3K Program/Erase cycles and an extended operating temperature ranging from -20℃~75℃. Transcend also offers the MTE710T-I with wide temperature (-40℃ ~ 85℃) capabilities to ensure sustained functionality and optimal reliability.

 

  • Supports NVM command
  • SLC caching technology
  • Dynamic thermal throttling
  • Built-in LDPC ECC (Error Correction Code) functionality
  • Advanced Global Wear-Leveling and Block management for reliability
  • Advanced Garbage Collection
  • Supports S.M.A.R.T. function to conduct health monitoring, analysis, and reporting for storage devices
  • TRIM command for better performance
  • Full drive encryption with Advanced Encryption Standard (AES) (optional)
  • Compliant with RoHS 2.0 standards
  • Compliant with PCI Express specification 3.1
  • Compliant with NVM Express specification 1.4
  • Space-saving M.2 form factor (80mm) – ideal for mobile computing devices
  • PCIe Gen 4 x4 interface
  • DDR4 DRAM Cache embedded
  • Endurance: 3K P/E cycles (Program/Erase cycles) guaranteed
Transcend's M.2 SSD MTE710T features the PCI Express (PCIe) Gen 4 x4 interface and is compatible with NVM Express (NVMe) 1.4 specifications to achieve never-before-seen transfer speeds. The MTE710T features state-of-the-art 3D NAND technology, which allows 112 layers of 3D NAND flash chips to be vertically stacked. Compared to 3D NAND at 96 layers, this density breakthrough greatly improves storage efficiency, and its built-in DRAM cache allows faster access. Applied with 30µ" gold finger PCB and Corner Bond technology, the MTE710T is fully tested in-house to guarantee reliability in mission-critical applications, boasting an endurance rating of 3K Program/Erase cycles and an extended operating temperature ranging from -20℃~75℃. Transcend also offers the MTE710T-I with wide temperature (-40℃ ~ 85℃) capabilities to ensure sustained functionality and optimal reliability.

 

  • Supports NVM command
  • SLC caching technology
  • Dynamic thermal throttling
  • Built-in LDPC ECC (Error Correction Code) functionality
  • Advanced Global Wear-Leveling and Block management for reliability
  • Advanced Garbage Collection
  • Supports S.M.A.R.T. function to conduct health monitoring, analysis, and reporting for storage devices
  • TRIM command for better performance
  • Full drive encryption with Advanced Encryption Standard (AES) (optional)
  • Compliant with RoHS 2.0 standards
  • Compliant with PCI Express specification 3.1
  • Compliant with NVM Express specification 1.4
  • Space-saving M.2 form factor (80mm) – ideal for mobile computing devices
  • PCIe Gen 4 x4 interface
  • DDR4 DRAM Cache embedded
  • Endurance: 3K P/E cycles (Program/Erase cycles) guaranteed
Products specifications
Attribute nameAttribute value
SSD usage tag4.6 W
Height0.141"
TBW rating1700
Power consumption (average)4.6 W
Width3.15"
Depth0.866"
Weight0.353 oz
PCI Express interface data lanesx4
NVMe version1.4
Design
CertificationCE /FCC /BSMI /UKCA
Technical details
Sustainability certificates500 MB/s
Features
Mean time between failures (MTBF)256 GB
Read speed3200 MB/s
Component for6900 MB/s
ECC-40 - 85 °C
Write speed3200 MB/s
Random read (4KB)500000 IOPS
Random write (4KB)560000 IOPS
SSD capacity2000 GB
Memory type3D NAND
S.M.A.R.T. supportY
NVMeY
TRIM supportY
SSD form factorM.2
Ports & interfaces
InterfacePCI Express 4.0
Power
Power consumption (idle)1.6 W
Operating voltage3.3 V
Operational conditions
Operating temperature (T-T)-20 - 75 °C
Operating vibration20 G
Storage temperature (T-T)-55 - 85 °C
Operating relative humidity (H-H)5 - 95 %
Storage relative humidity (H-H)5 - 95 %
Operating shock1500 G
*
*
*
Products specifications
Attribute nameAttribute value
SSD usage tag4.6 W
Height0.141"
TBW rating1700
Power consumption (average)4.6 W
Width3.15"
Depth0.866"
Weight0.353 oz
PCI Express interface data lanesx4
NVMe version1.4
Design
CertificationCE /FCC /BSMI /UKCA
Technical details
Sustainability certificates500 MB/s
Features
Mean time between failures (MTBF)256 GB
Read speed3200 MB/s
Component for6900 MB/s
ECC-40 - 85 °C
Write speed3200 MB/s
Random read (4KB)500000 IOPS
Random write (4KB)560000 IOPS
SSD capacity2000 GB
Memory type3D NAND
S.M.A.R.T. supportY
NVMeY
TRIM supportY
SSD form factorM.2
Ports & interfaces
InterfacePCI Express 4.0
Power
Power consumption (idle)1.6 W
Operating voltage3.3 V
Operational conditions
Operating temperature (T-T)-20 - 75 °C
Operating vibration20 G
Storage temperature (T-T)-55 - 85 °C
Operating relative humidity (H-H)5 - 95 %
Storage relative humidity (H-H)5 - 95 %
Operating shock1500 G
Product tags
  • (60987)